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Veeco

  • High-temperature source for molecular beam epitaxy (MBE) system

1800 - 2200 degreeC , 70 mm

Article: 00100348

High-temperature source for molecular beam epitaxy (MBE) system

Atom-H Source

For high-temperature production of Atomic H for MBE growth

Get rapid, reliable high temperature thermal cracking of H2 into Atomic H for molecular beam epitaxy (MBE) from the Veeco Atom-H Source. This all-refractory metal source is designed for operation at 1800-2200°C and is compatible with most preparation and growth chambers. Besides high-temperature MBE, Atomic H has been shown to be ideal for low temperature in-situ substrate cleaning and for structure overgrowth preparation.

Specialized high-temperature thermal cracker for cracking H2 into atomic H -- useful in substrate cleaning and during MBE growth Tungsten heater filament positioned inside the gas conductance tube for operation at 1800-2200°C Available on 2.75"/70mm water-cooled Cf mounting flange for compatibility with most preparation and growth chambers Well suited for low temperature in-situ substrate cleaning and preparing structures for overgrowth Applications include promotion of two-dimensional GaAs growth, GaN growth rate enhancement, and selective epitaxy

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