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Bipolar transistors, MOSFETs, IGBTs...

Anadigics

  • MESFET transistor / power / low-noise

0.25 - 3 GHz , 5 - 9 V | AGB3301

Article: 00012875

MESFET transistor / power / low-noise

The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50? wireless infrastructure applications such as MMDS, Cellular Base Stations, PCS and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3301 requires a single +5V to +9V supply, and typically consumes less than 1 Watt of power.
Features

* 250 - 3000 MHz Frequency Range
* +45 dBm Output IP3
* Low Noise Figure: 2.4 dB at 900 MHz
* 13.5 dB Gain at 900 MHz
* +24 dBm P1dB
* SOT-89 Package
* Single +5V to +9 V Supply
* Low Power: less than 1 Watt
* Case Temperature: -40 to +100 ºC
* RoHS Complaint Package Option, 260 ºC MSL-1

Specifications

  • Type: MESFET
  • Technology: power
  • Other characteristics: low-noise

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