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Bipolar transistors, MOSFETs, IGBTs...

ROHM Semiconductor

  • IGBT transistor / trench / fieldstop / silicon

650V, 4 to 50A

Article: 00012819

IGBT transistor / trench / fieldstop / silicon

ROHM’s IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Features:
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant

Specifications

  • Type: IGBT
  • Technology: trench, fieldstop
  • Other characteristics: silicon

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