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Bipolar Transistors Mosfets Igbts

Toshiba America Electronics Components

  • Transistor module

Article: 00012829

Transistor module

Toshiba Electronics Europe (TEE) has extended its family of silicon carbide (SiC) devices with the launch of a high-efficiency 3300V, 1500A power module. The MG1500FXF1US71 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and an SiC fast recovery diode (FRD) into a package with a footprint of just 140mm x 190mm.

Toshiba?s new module will save energy, space and weight and reduce acoustic noise in high-power switching inverter and motor control designs. Target applications include rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.

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