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  • InGaAs camera / NIR / industrial

2D-OMA V

Article: 00100011

InGaAs camera / NIR / industrial

PI's 2D-OMA V has set the latest industry standard for low-light level NIR imaging (0.9µm-1.7µm) and has already enabled researchers involved in NIR imaging applications such as single nanotube fluorescence to image their research experiments at extremely low-light levels. The 2D-OMA V detector uses a 320 x 256 format focal plane array with 30- µm x 30- µm pixels and is cryogenically cooled to -100°C to reduce thermally generated dark noise.

Features and Benefits

* InGaAs detector with 100% fill factor and >80% quantum efficiency
* Low dark current and extended integration times
* Greater than 50 full frames-per-second using 5 MHz readout
* Software controlled high- and low- gain modes for high-sensitivity or high-dynamic range operation
* On-line flat field (non-uniformity) and background correction
* Single sapphire window in the optical path for high-throughput
* Electronic shuttering for 1 µsec minimum exposure time

Specifications

  • Sensor: InGaAs
  • Spectrum: NIR
  • Applications: industrial

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